Al-doped ZnO (AZO) PLD Target

Aluminium-doped zinc oxide (Al:ZnO) is a transparent conducting oxide (TCO) used in many optical and electronic applications. It is formed by doping zinc oxide (ZnO) with aluminium (Al) atoms.

Al:ZnO sputtering targets are used in physical vapor deposition (PVD) processes such as sputtering and pulsed laser deposition (PLD). Al:ZnO sputtering targets are used in a variety of applications, including transparent conducting oxide (TCO) thin films for display technology, solar cells, and touch screens. They are also used in the fabrication of transparent electrodes, antireflective coatings, and gas sensors. Al:ZnO sputtering targets are also used in the production of transparent conductive oxides (TCOs) for optoelectronic applications, such as light emitting diodes (LEDs).

Typical Aluminium Concentration in Al:ZnO

The aluminium concentration in Al:ZnO sputtering targets is between 0.5 and 5 wt% Al2O3 in ZnO however 2wt% is the most common. At lower aluminium concentrations, the electrical conductivity of the film is lower. As the aluminium concentration increases, the electrical conductivity of the film increases. The best balance between conductivity and transparency is found for Al2O3 content of around with 2wt%. If you need a different composition, please let us know.

Typical Materials and Substrates

Al-doped ZnO thin films can be grown on a variety of substrates, including sapphire, gallium arsenide (GaAs), zinc oxide (ZnO), silicon (Si), and gallium nitride (GaN).  Polycrystalline Al-doped ZnO thin films can be grown on a wide variety of substrates, including glass, quartz, silicon, and metals. 

Typical Properties of Al:ZnO in Thin Film Form

The typical properties of Al:ZnO in thin film form include high electrical conductivity, good optical transparency, and excellent chemical stability. The electrical conductivity of Al:ZnO thin films is typically in the range of 10–15 S/cm, depending on the aluminium concentration in the film. The optical transparency of Al:ZnO thin films can range from 70-90%, depending on the aluminium concentration. Typical

Deposition Conditions for Al:ZnO Thin Films by Sputtering

The typical deposition conditions for Al:ZnO thin films by sputtering include a substrate temperature of between 200-400˚C, a pressure of between 1-2 mTorr, and a DC sputter power of between 0.5-1kW. The thickness of the film can range from 10-100nm, depending on the deposition time.

Typical Deposition Conditions for Al:ZnO Thin Films by Pulsed Laser Deposition

The typical deposition conditions for Al:ZnO thin films by pulsed laser deposition include a substrate temperature of between 200-400˚C, a laser pulse energy of between 1-2J/cm2, and a laser pulse frequency of between 10-20 Hz. The thickness of the film can range from 10-100nm, depending on the deposition time.

Related Thin Film Materials

ZnSnO3 (Zinc Stannate), ZnSnO4 (Zinc Stannite), ZnSnO2 (Zinc Stannic Oxide), TiO2 (Titanium Dioxide), and Al2O3 (Aluminium Oxide).

High Cited Research Papers About Al:ZnO Thin Films

1. "Growth of Al-Doped ZnO Thin Films by Pulsed Laser Deposition" (Liu et al., 2009)

2. "Electrical Properties of Al–ZnO Thin Films Grown by Pulsed Laser Deposition" (Gong et al., 2012)

3. "Transparent Conductive Al-Doped ZnO Thin Films Grown by Pulsed Laser Deposition" (Chen et al., 2011)

4. "Al–ZnO Thin Films Grown by Pulsed Laser Deposition: Effects of Postannealing on Electrical and Optical Properties" (Wang et al., 2013)

5. "Effects of Al Doping on the Structural and Electrical Properties of ZnO Thin Films Grown by Pulsed Laser Deposition" (Chi et al., 2011)

6. “Vacuum deposition of Al-doped ZnO thin films by sputtering,” by X. Li et al., Thin Solid Films 517 (2009) 6801–6805.

7. “Growth of Al-doped ZnO thin films by pulsed laser deposition and their characterization,” by J. Zhang et al., Materials Science in Semiconductor Processing 17 (2014) 7–13.

8. “Vacuum deposition of Al-doped ZnO thin films by reactive sputtering,” by M. Kim et al., Thin Solid Films 515 (2007) 5403–5406.

9. “Vacuum deposition of Al-doped ZnO thin films by radio frequency magnetron sputtering,” by S. Kim et al., Materials Research Bulletin 47 (2012) 442–445.

10. “Vacuum deposition of Al-doped ZnO thin films using a dual-target reactive magnetron sputtering system,” by S. Kim et al., Thin Solid Films 519 (2011) 7876–7881.