Skip to product information
1 of 1

Target Materials

Aluminium Nitride (AlN) PLD Target

Aluminium Nitride (AlN) PLD Target

Regular price $295.00 USD
Regular price Sale price $295.00 USD
Sale Sold out
Shipping calculated at checkout.
Diameter - Thickness
Material Aluminium Nitride
Formula AlN
Common Substrates Silicon, Sapphire,
Similar Materials GaN, SiC, Diamond
Crystal Structure Hexagonal


Aluminum Nitride Targets for Pulsed Laser Deposition

Introduction to AlN

Aluminum Nitride (AlN) is a ceramic material that is widely used in thin film form due to its unique properties. AlN is a wide-bandgap semiconductor with excellent thermal conductivity, exhibits pieznoelectrocity, high electrical resistivity, and high mechanical strength. These properties make AlN a promising material for a wide range of electronic and optoelectronic applications, including power electronics, high-temperature sensors, and LEDs.

Properties of AlN Thin Films

AlN thin films exhibit high thermal stability and excellent mechanical properties, making them suitable for high-temperature applications. AlN thin films also have a high electrical resistivity, low dielectric constant, and high breakdown voltage, which make them suitable for high-frequency and high-voltage applications. In addition, AlN thin films have a high refractive index and good optical transparency, which make them suitable for optoelectronic applications such as LEDs and photovoltaics.

Applications of AlN Thin Films

AlN thin films have a wide range of applications in various fields such as electronics, optics, and energy. AlN thin films are used in high-temperature sensors, power electronics, and radio frequency devices due to their high thermal conductivity and high breakdown voltage. AlN thin films are also used in optoelectronic devices such as LEDs and photovoltaics due to their high refractive index and good optical transparency.

Comparison to Other Materials

Compared to other wide-bandgap materials such as SiC and GaN, AlN has a higher thermal conductivity and better mechanical properties, which make it more suitable for high-temperature applications. In addition, AlN has a lower dielectric constant than SiC and GaN, which makes it more suitable for high-frequency applications. However, AlN has a lower bandgap than SiC and GaN, which limits its performance in some optoelectronic applications.

Crystal Structure of AlN

AlN has a hexagonal crystal structure with a space group of P63mc. The material consists of layers of Al and N atoms that are bonded together through covalent and ionic interactions. The layers are stacked on top of each other to form a 3D crystal. Each Al atom is surrounded by four N atoms, and each N atom is surrounded by three Al atoms.

Similar Thin Film Materials to AlN

There are several other materials that are similar to AlN in terms of their properties and applications. These include:

  • GaN (gallium nitride)
  • SiC (silicon carbide)
  • Diamond

     

Materials

Shipping & Returns

Dimensions

Care Instructions

View full details
  • Free Shipping

    Wherever you are, get free shipping on orders from Target Materials

  • High Quality Packaging

    All our targets are vacuum packed, sealed and protected so they arrive with you exactly how they left from us.