Cu2O Targets for Pulsed Laser Deposition

Introduction to the properties of Cu2O and its use in thin film form

Cuprous oxide (Cu2O) is a semiconductor material with interesting optoelectronic properties that make it attractive for various applications such as solar cells, photocatalysis, and gas sensors. As a target for pulsed laser deposition (PLD), Cu2O is widely used to deposit thin films with controlled morphology and thickness on various substrates.

What are the optical and electronic properties of Cu2O

Cu2O has a direct bandgap of 2.2 eV, which makes it suitable for applications such as photovoltaics, photoelectrochemical cells, and photocatalysis. The material also exhibits a high absorption coefficient in the visible region of the electromagnetic spectrum, which is advantageous for absorbing sunlight and converting it into electrical energy.

How do the optoelectrical properties of Cu2O compare to similar materials

Cu2O has unique optoelectronic properties that are distinct from those of other materials. For example, its direct bandgap and high absorption coefficient in the visible region of the electromagnetic spectrum make it a promising candidate for various optoelectronic applications such as photovoltaics, photoelectrochemical cells, and photocatalysis.

Crystal Structure of Cu2O

Cu2O has a cubic crystal structure with a lattice constant of 4.27 Å. The crystal structure of Cu2O is similar to that of rock salt, with Cu+ ions occupying the cationic positions and O2- ions occupying the anionic positions.

Typical substrates with a good lattice match used for epitaxial growth of Cu2O

Cu2O can be epitaxially grown on various substrates such as (100) MgO, (111) SrTiO3, and (100) LaAlO3, which have a good lattice match with the material. The choice of substrate depends on the desired properties of the thin film and the application in which it will be used.

List 5 other similar thin film materials to Cu2O

• CuO
• ZnO
• Fe2O3
• SnO2
• Bi2O3