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Zirconia + 2% HfO2 (ZrO2 + 2% HfO2) PLD Target

Zirconia + 2% HfO2 (ZrO2 + 2% HfO2) PLD Target

Regular price $350.00 USD
Regular price Sale price $350.00 USD
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Material Hafnia Stabilized Zirconium Oxide 
Formula ZrO2 + 2% HfO2
Common substrates Silicon, Silicon Dioxide, Silicon Nitride, Lanthanum Aluminum Oxide, Strontium Titanate
Similar Materials Al2O3 and HfO2
Crystal Structure Ceramic


Introduction

Hafnia Stabilized Zirconium Oxide (HZO) is a ceramic material commonly used as a dielectric material in electronic devices. HZO thin films have unique properties that make them suitable for use in various applications such as capacitors, memory devices, and sensors. The addition of hafnium oxide (HfO2) stabilizes the crystal structure of zirconium oxide (ZrO2) and improves its electrical properties. HZO thin films can also be used as a high-k dielectric material in complementary metal-oxide-semiconductor (CMOS) devices.

Optical and Electrical Properties of Hafnia Stabilized Zirconium Oxide

HZO thin films have a high dielectric constant (k), low leakage current, and high breakdown strength, making them suitable for use as a capacitor material. HZO also exhibits excellent optical properties such as high transparency in the visible region of the electromagnetic spectrum, making it a promising material for use in optoelectronic devices.

Comparison with Similar Materials

HZO thin films exhibit similar properties to other high-k dielectric materials such as aluminum oxide (Al2O3) and hafnium oxide (HfO2). However, the addition of hafnium oxide to zirconium oxide stabilizes the crystal structure and improves the electrical properties of HZO, making it a more attractive material for use in electronic devices.

Crystal Structure of Hafnia Stabilized Zirconium Oxide

Hafnia stabilized zirconium oxide has a monoclinic crystal structure with a lattice constant of a = 5.14 Å, b = 5.07 Å, c = 5.20 Å, and β = 99.7°. The addition of hafnium oxide stabilizes the crystal structure and reduces the formation of defects in the thin film.

Typical Substrates for Epitaxial Growth of Hafnia Stabilized Zirconium Oxide

  • Silicon
  • Silicon Dioxide
  • Silicon Nitride
  • Lanthanum Aluminum Oxide
  • Strontium Titanate

5 Similar Thin Film Materials to Hafnia Stabilized Zirconium Oxide

  1. Hafnium Oxide (HfO2)
  2. Aluminum Oxide (Al2O3)
  3. Titanium Oxide (TiO2)
  4. Tantalum Oxide (Ta2O5)
  5. Niobium Oxide (Nb2O5)

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