Hf0.5Zr0.5O2 Thin Films

Hafnium zirconium oxide (Hf0.5Zr0.5O2) is a mixed oxide material that combines the properties of HfO2 and ZrO2. 

In ferroelectric applications, Hf0.5Zr0.5O2 thin films exhibit a high remnant polarization and a low coercive field, making them ideal for non-volatile memory applications. The ferroelectricity properties of Hf0.5Zr0.5O2 are still under investigation, but recent studies have shown promising results.

Similar to other ferroelectric materials, ferroelectricity in Hf0.5Zr0.5O2 is believed to be due to the spontaneous polarization of the material. This polarization can be controlled by doping or other modifications to the material's crystal structure.

Compared to pure HfO2, Hf0.5Zr0.5O2 has a higher dielectric constant and a lower leakage current, making it more suitable for high-power and high-frequency applications.

The crystal structure of Hf0.5Zr0.5O2 is cubic, with a lattice parameter of approximately 0.529 nm. It can be doped with other elements to control its properties and improve its stability.

Typical substrates with a good lattice match used for epitaxial growth of Hf0.5Zr0.5O2 include Si(001), Si(111), and YSZ(111). Other non-matching substrates such as sapphire, glass, and quartz can also be used with appropriate buffer layers.

Other Ferroelectric Thin Film Materials

• BaTiO3
• KNbO3
• BiFeO3
• Pb(Zr,Ti)O3
• LaAlO3