Indium Aluminium Zinc Oxide (In,Al:ZnO) PLD Target
Indium Aluminium Zinc Oxide (In,Al:ZnO) PLD Target
Material | Indium Aluminium Zinc Oxide |
Formula | In,Al:ZnO |
Common substrates | Sapphire, Silicon, Glass |
Similar Materials | ITO, ZnO, FTO, TiO₂, Al:ZnO |
Crystal Structure | Wurtzite |
Introduction to Indium Aluminium Zinc Oxide
Indium Aluminium Zinc Oxide (IAZO) is a transparent conducting oxide (TCO) with excellent electrical and optical properties, making it a popular material for thin film applications. IAZO is known for its high electron mobility, good transparency, and low resistivity, which makes it ideal for use in optoelectronics, solar cells, and touch panels.
Composition of Indium Aluminium Zinc Oxide
In:Al:ZnO targets commonly are made with an oxide ratio of In2O3/Al2O3/ZnO 65/16/19 wt% which provides an excellent balance of optical and electronic properties, however we can make to your requirements so if you would like a different ratio, or any doping added in, please just let us know.
Optical and Electrical Properties of IAZO
IAZO has a wide bandgap of approximately 3.3 eV, which makes it highly transparent in the visible region. It also has a high electron mobility of up to 50 cm²/Vs and low resistivity of 10-4 Ωcm. These properties make IAZO an excellent candidate for use as a TCO in thin film applications.
Comparison to Similar Materials
IAZO has superior electrical and optical properties compared to other TCO materials such as indium tin oxide (ITO), zinc oxide (ZnO), and fluorine-doped tin oxide (FTO). IAZO has a higher electron mobility and lower resistivity compared to these materials, while still maintaining good transparency in the visible region.
Crystal Structure of IAZO
IAZO has a cubic crystal structure with a lattice parameter of approximately 10.15 Å. The crystal structure of IAZO can be described as a substitutional solid solution of In₂O₃, Al₂O₃, and ZnO, where some of the indium atoms are replaced by aluminum and zinc atoms.
Typical Substrates for Epitaxial Growth of IAZO
IAZO can be grown epitaxially on various substrates, including sapphire, silicon, and glass. Sapphire is a popular substrate for IAZO growth due to its good lattice match and high thermal conductivity. Silicon and glass substrates can also be used, but may require buffer layers to achieve good epitaxy.
Other Similar Thin Film Materials to IAZO
- Indium Tin Oxide (ITO)
- Zinc Oxide (ZnO)
- Fluorine-doped Tin Oxide (FTO)
- Titanium Dioxide (TiO₂)
- Aluminium-doped Zinc Oxide (AZO)
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