Indium Gallium Oxide (In2O3:Ga2O3) PLD Target

Introduction to Indium Gallium Oxide (IGO) Thin Films as TCOs

Indium Gallium Oxide (IGO) is a transparent conductive oxide (TCO) material that is commonly used in electronic devices such as solar cells, touch screens, and flat panel displays. IGO thin films exhibit high optical transparency and good electrical conductivity, making them ideal for use as transparent electrodes in these applications.

Common Composiiton of IGO Targets

We can make IGO to your requirement however the most common is In2O3:Ga2O3 ratio of 1:1. 

Optical and Electronic Properties of IGO

IGO thin films typically have high optical transmittance in the visible and near-infrared regions of the electromagnetic spectrum, with transmittance values of up to 90% or higher. They also exhibit low absorption coefficients, making them suitable for use in optical applications.

Electronic properties of IGO thin films can vary depending on the specific composition and processing conditions used to create the material. However, IGO typically exhibits high carrier mobility and low resistivity, making it an attractive alternative to other TCO materials such as indium tin oxide (ITO) and indium gallium zinc oxide (IGZO).

Comparison of Electrical Properties to ITO and IGZO

IGO thin films have been found to exhibit higher carrier mobility and lower resistivity than ITO thin films, making them a promising replacement for ITO in some applications. However, the exact electrical properties of IGO can vary depending on the specific composition and processing conditions used to create the material.

When compared to IGZO, IGO thin films typically have lower carrier mobility and higher resistivity, but they also exhibit higher optical transparency and better stability over time.

Typical Crystal Structure of IGO

IGO thin films typically exhibit a wurtzite crystal structure, which is similar to the crystal structure of other zinc oxide-based materials. The wurtzite crystal structure has a hexagonal close-packed lattice with alternating layers of indium, gallium, and oxygen atoms. IGO films can also be amorphos but this is most common using lower enegy techniques other than PLD.

Typical Substrates for Epitaxial Growth of IGO

Substrates with a good lattice match for epitaxial growth of IGO include sapphire, silicon, and gallium nitride (GaN).

5 Other Similar Thin Film TCO Materials to IGO

1. Indium Tin Oxide (ITO)
2. Indium Zinc Oxide (IZO)
3. Tin Oxide (SnO2)
4. Zinc Oxide (ZnO)
5. Copper Aluminum Oxide (CuAlO2)