Target Materials
Indium Gallium Zinc Oxide (In,Ga:ZnO) PLD Target
Indium Gallium Zinc Oxide (In,Ga:ZnO) PLD Target
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| Material | Indium Gallium Zinc Oxide |
| Formula | In2O3:Ga2O3:ZnO 2:1:1 |
| Common substrates | Sapphire, Silicon, Glass |
| Similar Materials | ITO, ZnO, FTO, AZO, GZO |
| Crystal Structure | Wurtzite or amorphous in thin films form |
Introduction to Indium Gallium Zinc Oxide
Indium Gallium Zinc Oxide (IGZO) is a transparent conducting oxide (TCO) that is used in thin film form in a variety of applications. IGZO PLD Targets consist of 2:1:1 ratio of In2O3, Ga2O3 and ZnO.
IGZO is known for its excellent electrical and optical properties, including high electron mobility, good transparency, and low resistivity. IGZO is commonly used in displays, solar cells, and touch panels due to its unique properties.
Common Indium / Gallium / Zinc Ratios in IGZO
IGZO (Indium-Gallium-Zinc Oxide) is a transparent conductive oxide (TCO) material commonly used in electronic displays, such as LCDs and OLEDs. The most common ratios of In2O3:Ga2O3:ZnO in IGZO are:
- 1:1:1 (also known as IZO)
- 2:1:1 (also known as IGZO)
The specific ratios used depend on the desired properties of the IGZO material and the application it will be used for.
When the ratios of In2O3:Ga2O3:ZnO are changed, it can affect the electrical and optical properties of the IGZO material. For example:
- Increasing the amount of indium oxide (In2O3) can increase the electrical conductivity of the IGZO material, but can also reduce its optical transparency.
- Increasing the amount of gallium oxide (Ga2O3) can increase the stability of the IGZO material, but can also reduce its electrical conductivity.
- Changing the ratio of zinc oxide (ZnO) can affect the bandgap of the IGZO material, which can affect its optical properties.
Adjusting the ratios of In2O3:Ga2O3:ZnO in IGZO can be used to optimize the material's properties for specific applications.
Optical and Electrical Properties of IGZO
IGZO has a wide bandgap of approximately 3.1 eV, which makes it highly transparent in the visible region. It also has a high electron mobility of up to 30 cm²/Vs and low resistivity of 10-4 Ωcm. These properties make IGZO an excellent candidate for use as a TCO in thin film applications.
Comparison to Similar Materials
IGZO has superior electrical and optical properties compared to other TCO materials such as indium tin oxide (ITO), zinc oxide (ZnO), and fluorine-doped tin oxide (FTO). IGZO has a higher electron mobility and lower resistivity compared to these materials, while still maintaining good transparency in the visible region.
Crystal Structure of IGZO
IGZO has a crystalline structure with a tetragonal symmetry and a lattice parameter of approximately 5.6 Å. The crystal structure of IGZO can be described as a substitutional solid solution of In₂O₃, Ga₂O₃, and ZnO, where some of the indium atoms are replaced by gallium and zinc atoms.
Typical Substrates for Epitaxial Growth of IGZO
IGZO can be grown epitaxially on various substrates, including sapphire and silicon. Sapphire is a popular substrate for IGZO growth due to its good lattice match and high thermal conductivity. Silicon and glass substrates can also be used, but may require buffer layers to achieve good epitaxy.
Other Similar Thin Film Materials to IGZO
- Indium Tin Oxide (ITO)
- Zinc Oxide (ZnO)
- Fluorine-doped Tin Oxide (FTO)
- Aluminium-doped Zinc Oxide (AZO)
- Gallium-doped Zinc Oxide (GZO)
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