Introduction to Indium Oxide (In2O3) Thin Film Targets

Indium oxide (In2O3) is a transparent and conductive oxide material commonly used in thin film form for optoelectronic and electronic applications. In2O3 thin films can be deposited by various techniques, such as pulsed laser deposition (PLD), sputtering, and chemical vapor deposition (CVD). Here, we will discuss the properties of In2O3 and its use in thin film form.

Optical and Electronic Properties of In2O3

In2O3 has excellent optical and electrical properties, making it a popular choice for transparent conductive oxide (TCO) applications. Its bandgap is around 3.6 eV, which means it has good transparency in the visible region and high electrical conductivity in the near-infrared region. In2O3 also has a high electron mobility, making it a good choice for electronic applications.

Comparison of Optoelectrical Properties to Similar Materials

In2O3 has better electrical conductivity and electron mobility compared to other TCO materials, such as SnO2 and ZnO. However, it has lower transmittance in the ultraviolet (UV) region compared to these materials. Additionally, compared to ITO (indium tin oxide), In2O3 has higher electron mobility and lower resistivity but lower transparency in the visible region.

Crystal Structure of In2O3

In2O3 has a cubic bixbyite crystal structure, which is a common structure for many metal oxides. The lattice constant of In2O3 is around 10 Å.

Typical Substrates for Epitaxial Growth of In2O3

Some common substrates used for the epitaxial growth of In2O3 thin films include yttria-stabilized zirconia (YSZ), MgO, and Al2O3. These substrates have a good lattice match with In2O3 and can result in high-quality, epitaxial films.

Other Similar Thin Film Materials to In2O3

1. SnO2
2. ZnO
3. CdO
4. TiO2
5. Al-doped ZnO (AZO)