Indium Zinc Oxide, IZO PLD Target

Introduction to IZO

Indium Zinc Oxide (IZO) is a transparent conductive oxide with a high electrical conductivity and high optical transparency in the visible region. It is composed of 90% In2O3 and 10% ZnO. It is commonly used in thin film form as a transparent electrode in optoelectronic devices such as solar cells, light-emitting diodes (LEDs), and liquid crystal displays (LCDs).

Properties of Indium Zinc Oxide

IZO has a high electrical conductivity (>1000 S/cm) and a high optical transmittance (>85%) in the visible region. It has a low resistivity and a high carrier concentration, which make it an ideal candidate for transparent conductive oxide applications. Additionally, IZO has a high mobility and a low electron affinity, which improve its performance in electronic devices.

Comparison to Similar Materials

IZO has similar electrical and optical properties compared to other transparent conductive oxides such as indium tin oxide (ITO) and whilst it is easily etchable, it isnot as environmentally durable as ITO.  IZO exhibits poor water stability with time and temperature, and is very sensitive to wet chemistry.

Crystal Structure

IZO has a hexagonal wurtzite crystal structure with lattice parameters of a = 3.243 Å and c = 5.205 Å. It has a lattice mismatch of 2.4% with sapphire (Al2O3), which is commonly used as a substrate for epitaxial growth of IZO.

Typical Substrates for Epitaxial Growth

Typical substrates with a good lattice match for epitaxial growth of IZO include sapphire (Al2O3), yttria-stabilized zirconia (YSZ), and MgO.

Similar Thin Film Materials to Indium Zinc Oxide

1. Indium Tin Oxide (ITO)
2. Zinc Oxide (ZnO)
3. Tin Oxide (SnO2)
4. Cadmium Oxide (CdO)
5. Gallium Zinc Oxide (GZO)