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Titanium Nitride (TiN) PLD Target

Titanium Nitride (TiN) PLD Target

Regular price $295.00 USD
Regular price Sale price $295.00 USD
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Diameter - Thickness
Material Titanium Nitride
Formula TiN
Common Substrates Silicon (Si), Sapphire (Al2O3),
Similar Materials TiC, TiAlN
Crystal Structure Face centred cubic (FCC)

 

TiN Targets for Pulsed Laser Deposition

Introduction to TiN

Titanium Nitride (TiN) is a hard, wear-resistant, and corrosion-resistant material that is widely used in thin film form for a variety of applications. TiN is a refractory material with high melting point, high hardness, and good adhesion to substrates, making it suitable for use in harsh environments. TiN thin films also have good electrical conductivity and low friction, making them useful in microelectronics and tribology applications.

Properties of TiN Thin Films

TiN thin films have a high hardness, good wear resistance, and low coefficient of friction, making them suitable for wear-resistant and anti-corrosion coatings. TiN thin films also have good adhesion to substrates, high thermal stability, and good electrical conductivity, making them suitable for use in microelectronics and tribology applications. In addition, TiN thin films have a high reflectivity in the visible and near-infrared spectral range, making them useful in optical applications.

Applications of TiN Thin Films

TiN thin films have a wide range of applications in various fields such as microelectronics, tribology, optics, and biomedical engineering. TiN thin films are used as wear-resistant and anti-corrosion coatings for cutting tools, molds, and medical implants. TiN thin films are also used in microelectronics as diffusion barriers and contact materials. In addition, TiN thin films are used in optics as high-reflectivity mirrors and protective coatings.

Comparison to Other Materials

Compared to other hard coatings such as TiC, TiAlN, and CrN, TiN has a higher electrical conductivity and better adhesion to substrates, making it more suitable for microelectronics applications. As it can calso be grown by ALD it has also received a lot of interest for electrode materials in semiconductor device applications, such as logic transistors and dynamic random access memories (DRAMs). Its high ear resistance means it also find application in biomedical implants

Crystal Structure of TiN

TiN has a face-centered cubic crystal structure with a space group of Fm-3m. The material consists of layers of Ti and N atoms that are bonded together through covalent and ionic interactions. The layers are stacked on top of each other to form a 3D crystal. Each Ti atom is surrounded by six N atoms, and each N atom is surrounded by four Ti atoms.

Similar Thin Film Materials to TiN

There are several other materials that are similar to TiN in terms of their properties and applications. These include:

  • TiC (titanium carbide)
  • TiAlN

     

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